| Autor: |
Sugiura, Masayuki, Kishi, Masato, Katoda, Takashi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1995, Vol. 77 Issue 8, p4009, 4p, 3 Diagrams, 2 Charts, 1 Graph |
| Abstrakt: |
Provides information on a study that presented an in situ Raman measurement system for the characterization of the strain in the heterostructure and results for the gallium phosphide silicon structure at the cooling step from the growth temperature to room temperature. Experimental procedure; Results and discussion on the study; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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