Depth inhomogeneity of porous silicon layers.

Autor:	Thönissen, M., Billat, S., Krüger, M., Lüth, H., Berger, M. G., Frotscher, U., Rossow, U.
Předmět:	INHOMOGENEOUS materials POROUS silicon
Zdroj:	Journal of Applied Physics; 9/1/1996, Vol. 80 Issue 5, p2990, 4p, 5 Graphs
Abstrakt:	Discusses a study which investigated the depth inhomogeneity of porous silicon layers. Theoretical background; Methods used; Findings.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu