Complex impedance spectroscopy for metal-semiconductor field-effect-transistor surface characterization.

Autor:	Charache, G. W., Maby, E. W.
Předmět:	FIELD-effect transistors SPECTRUM analysis INTEGRATED circuit passivation GALLIUM arsenide
Zdroj:	Journal of Applied Physics; 9/1/1995, Vol. 78 Issue 5, p3488, 4p
Abstrakt:	Presents information on a metal-semiconductor field-effect-transistor surface characterization technique. Comparison of the technique with deep-level transient spectroscopy; Background on the passivation of gallium arsenide surface; Origin of frequency-dependent impedances.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu