Characterization of the effect of growth conditions on a-SiC:H films.

Autor: Rava, P., Crovini, G., Demichelis, F., Giorgis, F., Pirri, C. F.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1996, Vol. 80 Issue 7, p4116, 8p, 1 Diagram, 10 Graphs
Abstrakt: Investigates the effects of dissipated power and gas dwell time in plasmas on the properties of thin films deposited by plasma-enhanced chemical-vapor deposition. Experimental details; Result of optical, structural and electrical characterizations; Findings of the study.
Databáze: Complementary Index