Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices.

Autor: Zhu, Jane G., White, C.W., Budai, J. D., Withrow, S. P., Chen, Y.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1995, Vol. 78 Issue 7, p4386, 4p
Abstrakt: Presents a study which described the fabrication of nanocrystals of group-IV semiconductor materials in silicon dioxide by ion implantation and subsequent thermal annealing. Microstructure of the nanocrystals; Influences of the annealing temperatures and implantation doses on the nanocrystal size distributions; Results of the x-ray diffraction measurements.
Databáze: Complementary Index