Autor: |
Zhu, Jane G., White, C.W., Budai, J. D., Withrow, S. P., Chen, Y. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 10/1/1995, Vol. 78 Issue 7, p4386, 4p |
Abstrakt: |
Presents a study which described the fabrication of nanocrystals of group-IV semiconductor materials in silicon dioxide by ion implantation and subsequent thermal annealing. Microstructure of the nanocrystals; Influences of the annealing temperatures and implantation doses on the nanocrystal size distributions; Results of the x-ray diffraction measurements. |
Databáze: |
Complementary Index |
Externí odkaz: |
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