| Autor: |
Knights, A. P., Kowalski, G., Saleh, A. S., Towner, A., Patel, M. I., Rice-Evans, P. C., Moore, M., Gledhill, G. A., Nossarzewska-Orlowska, E., Brzozowski, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1995, Vol. 78 Issue 7, p4411, 5p |
| Abstrakt: |
Presents a study which described measurements of porous silicon using a monoenergetic positron beam in conjunction with the Doppler broadening technique. Appropriateness of the technique to thin porous silicon layers; Effects of etching porous silicon using hydrofluoric acid; Information on the photoluminescence spectra measured from the samples. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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