Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers.

Autor: Flatté, M. E., Grein, C. H., Ehrenreich, H., Miles, R. H., Cruz, H.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1995, Vol. 78 Issue 7, p4552, 8p
Abstrakt: Presents a study which calculated the ideal threshold current densities of IR lasers for active layers composed of indium arsenide/InGaSb superlattices, InGaAsSb quantum well quaternaries, InAsSb bulk ternaries, and HGCdTe superlattices. Formalism employed to calculate the superlattice band structure; Classes of laser structures considered in the study; Usefulness of band-structure engineering to obtain optimum laser performance.
Databáze: Complementary Index