Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth.
Autor: | Ababou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetherington, D., Yelon, A., L’Espérance, G., Masut, R. A. |
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Zdroj: | Journal of Applied Physics; 11/1/1996, Vol. 80 Issue 9, p4997, 9p |
Abstrakt: | Deals with a study which assessed heteroepitaxial InP layers on silicon metalorganic vapor phase epitaxy using thermal cycle growth. Experimental details; Results; Discussion and conclusions. |
Databáze: | Complementary Index |
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