Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth.

Autor:	Ababou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetherington, D., Yelon, A., L’Espérance, G., Masut, R. A.
Předmět:	SILICON EPITAXY CRYSTAL growth
Zdroj:	Journal of Applied Physics; 11/1/1996, Vol. 80 Issue 9, p4997, 9p
Abstrakt:	Deals with a study which assessed heteroepitaxial InP layers on silicon metalorganic vapor phase epitaxy using thermal cycle growth. Experimental details; Results; Discussion and conclusions.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu