Temperature dependence of optical properties of the deep sulfur center in silicon.

Autor: Pettersson, H., Pässler, R., Blaschta, F., Grimmeiss, H. G.
Předmět:
Zdroj: Journal of Applied Physics; 11/1/1996, Vol. 80 Issue 9, p5312, 6p, 1 Chart, 4 Graphs
Abstrakt: Focuses on a study which analyzed the temperature dependence of optical properties of the deep sulfur center in silicon. Experimental details; Numerical results and discussion; Conclusions.
Databáze: Complementary Index