| Autor: |
Im, S., Lie, D. Y. C., Nicolet, M.-A. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 5/1/1996, Vol. 79 Issue 9, p7389, 3p, 3 Graphs |
| Abstrakt: |
Deals with a metastable pseudomorphic Ge[sub0.08]Si[sub0.92] layers grown by chemical vapor deposition on silicon substrate and implanted at room temperature with arsenic ions. Characterization of the damage and strain of the implanted layers before and after annealing; Results of double-crystal x-ray diffractometry measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
