| Autor: |
Roblin, Patrick, Potter, Robert C., Fathimulla, Ayub |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1996, Vol. 79 Issue 5, p2502, 7p, 2 Charts, 9 Graphs |
| Abstrakt: |
Provides information on a study that presented simulation results on the current-voltage characteristics of InP-based AlAs/InGaAs resonant tunneling diode with InAs subwell. Details on the quantum simulation of interface roughness scattering; Results and discussion on the study; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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