Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. II. Light beam induced current study of recombination centers.
| Autor: | Ehret, E., Maddalon-Vinante, C. |
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| Zdroj: | Journal of Applied Physics; 3/1/1996, Vol. 79 Issue 5, p2712, 5p, 2 Diagrams, 2 Charts, 2 Graphs |
| Abstrakt: | Provides information on a study that reported results concerning the generation of recombination centers induced by rapid thermal annealing and by the combination of this heat pulse with an internal gettering process. Experimental procedure; Results and discussion on the study; Conclusion. |
| Databáze: | Complementary Index |
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