Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity.

Autor: Kizilyalli, I. C., Rambaud, M. M., Ham, T. E., Stevie, F. A., Kahora, P. M., Zaneski, G., Thoma, M. J., Boulin, D. M.
Předmět:
Zdroj: Journal of Applied Physics; 3/1/1996, Vol. 79 Issue 5, p2738, 7p, 1 Black and White Photograph, 1 Chart, 7 Graphs
Abstrakt: Provides information on a study that presented predictive and accurate modeling of base and collector currents in poly-silicon emitter bipolar transistors. Device fabrication and experiments; Results and discussion on the study; Conclusions.
Databáze: Complementary Index