Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation.

Autor: Maddalon-Vinante, C., Ehret, E., Barbier, D.
Předmět:
Zdroj: Journal of Applied Physics; 3/1/1996, Vol. 79 Issue 5, p2707, 5p, 1 Black and White Photograph, 3 Charts, 2 Graphs
Abstrakt: Presents information on a study that examined the effect of rapid thermal annealing at 1200 degrees centigrade as a pretreatment on the precipitation of oxygen during a three-step internal gettering process. Experimental procedure; Results and discussion on the study; Conclusion.
Databáze: Complementary Index