| Autor: |
Lie, D. Y. C., Im, S., Nicolet, M.-A., Theodore, N. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8341, 8p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
Presents information on a study that investigated whether short annealing can preserve the pseudomorphic strain and simultaneously activate the dopants for silicon/GeSi samples after high-dose implantation as it does for low-dose implantation. Methodology of the study; Results and discussion on the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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