Effect of post-pattern annealing on the grain structure and reliability of Al-based interconnects.

Autor: Kang, S. H., Kim, C., Morris, J. W., Génin, F. Y.
Předmět:
Zdroj: Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8330, 6p, 2 Black and White Photographs, 12 Graphs
Abstrakt: Presents information on a study that addressed the possibility of improving the electromigration resistance of aluminum and aluminum-copper thin-film conductors with quasi-bamboo structures. Experimental procedure; Results and discussion on the study.
Databáze: Complementary Index