| Autor: |
Vanhellemont, J., Simoen, E., Kaniava, A., Libezny, M., Claeys, C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1995, Vol. 77 Issue 11, p5669, 8p |
| Abstrakt: |
Examines the electrical activity of extended lattice defects formed by interstitial oxygen precipitation in silicon. Impact of the defects on diode characteristics and on minority carrier lifetime for different initial oxygen contents and pretreatments; Techniques used to study the carrier traps present in the substrate; Correlation between the electrical results and the structural and chemical characterization. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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