| Autor: |
Wang, Q. H., Bowser, M. I., Swanson, J. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1995, Vol. 77 Issue 11, p5793, 9p |
| Abstrakt: |
Presents information on a study which discussed the static and dynamic properties of interface states between silicon nitride and n-gallium arsenide (GaAs). Pretreatments made using metal-insulator-semiconductor capacitance-voltage; Information on current transient spectroscopy applied to GaAs; Transient spectroscopy observations. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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