Autor: |
Larsen, K. Kyllesbech, Tavares, J., Bender, H., Donaton, R. A., Lauwers, A., Maex, K. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 7/1/1995, Vol. 78 Issue 1, p599, 3p, 3 Black and White Photographs |
Abstrakt: |
Deals with a study that detailed the formation of epitaxial semiconducting iron-disilicide grains using an iron-titanium bilayer on (100) silicon. Function of annealing conditions; Composition of the trilayer; Area where the cross-sectional transmission electron microscopy was carried out. |
Databáze: |
Complementary Index |
Externí odkaz: |
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