| Autor: |
Bylsma, R. B., Hobson, W. S., Lopata, J., Zydzik, G. J., Geva, M., Asom, M. T., Pearton, S. J., Thomas, P. M., Bridenbaugh, P. M., Washington, M. A., Roccasecca, D. D., Wilt, D. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1994, Vol. 76 Issue 1, p590, 3p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
Presents a study which fabricated high power carbon-doped indium gallium arsenide/aluminum gallium arsenide lasers using an impurity-induced layer disordering process to define the active region. Advantage of carbon doping; Results of the secondary ion mass spectrometry measurements; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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