Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate.

Autor: Russell, S. W., Strane, J. W., Mayer, J. W., Wang, S. Q.
Předmět:
Zdroj: Journal of Applied Physics; 7/1/1994, Vol. 76 Issue 1, p257, 7p, 12 Graphs
Abstrakt: Presents a study which investigated the reaction kinetics of titanium films on silicon dioxide using Rutherford backscattering spectrometry. Experimental methods; Results; Discussion.
Databáze: Complementary Index