Electronic properties of cesium on 6H-SiC surfaces.

Autor: van Elsbergen, V., Kampen, T. U., Mönch, W.
Předmět:
Zdroj: Journal of Applied Physics; 1/1/1996, Vol. 79 Issue 1, p316, 6p
Abstrakt: Focuses on a study which investigated the adsorption of cesium on clean surfaces of 6H-silicon carbide samples. Description of the experimental set-up; Findings on the Fermi level at clean surfaces; Discussion on the behavior of cesium layer.
Databáze: Complementary Index