Electronic properties of cesium on 6H-SiC surfaces.
Autor: | van Elsbergen, V., Kampen, T. U., Mönch, W. |
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Zdroj: | Journal of Applied Physics; 1/1/1996, Vol. 79 Issue 1, p316, 6p |
Abstrakt: | Focuses on a study which investigated the adsorption of cesium on clean surfaces of 6H-silicon carbide samples. Description of the experimental set-up; Findings on the Fermi level at clean surfaces; Discussion on the behavior of cesium layer. |
Databáze: | Complementary Index |
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