Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: a wide band gap material for optoelectronic devices.
| Autor: | Demichelis, F., Crovini, G., Giorgis, F., Pirri, C. F., Tresso, E. |
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| Zdroj: | Journal of Applied Physics; 2/1/1996, Vol. 79 Issue 3, p1730, 6p |
| Abstrakt: | Deals with a study which compared the optoelectronic properties of a-SiN[subx]:H[suby] films with those of device quality a-Si[sub1-x]C[subx]:H films. Experimental details; Results and discussion; Conclusions. |
| Databáze: | Complementary Index |
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