Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses.

Autor:	Hatta, E., Nagao, J., Mukasa, K.
Předmět:	TUNNEL design & construction CONDUCTION electrons METALS SEMICONDUCTORS
Zdroj:	Journal of Applied Physics; 2/1/1996, Vol. 79 Issue 3, p1511, 4p, 5 Graphs
Abstrakt:	Deals with a study which calculated tunneling conductance in metal-narrow-gap-semiconductor-metal tunnel junctions. Background to the study; Formulation of the problem; Results and discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu