| Autor: |
Jin, Gongjiu, Jones, B. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1996, Vol. 80 Issue 11, p6340, 9p, 1 Diagram, 1 Chart, 5 Graphs |
| Abstrakt: |
Presents a study which examined the effects of traps on the free surface of gallium arsenide field effect transistors. Characteristics of models for quasi-Fermi level; Basic concepts on surface fermi level pinning and surface conductance; Discussion on charging and discharging in the ungated surface of the transistors. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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