| Autor: |
Tu, L. W., Schubert, E. F., Hong, M., Zydzik, G. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/1996, Vol. 80 Issue 11, p6448, 4p, 2 Diagrams, 4 Graphs |
| Abstrakt: |
Proposes an approach to the coating of semiconductor laser facets, using thin silicon (Si) and band gap dielectric layers. Consequences of the formation of electronic states at the semiconductor surface; Description of the layer sequence and band diagram of the gallium arsenide/α-Si/ Al[sub2]O[sub3] coating; Information on several methods of hydrogen passivation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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