| Autor: |
Kushner, Mark J., Collison, Wenli Z., Grapperhaus, Michael J., Holland, John P., Barnes, Michael S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1996, Vol. 80 Issue 3, p1337, 8p, 2 Black and White Photographs, 3 Diagrams, 2 Graphs |
| Abstrakt: |
Presents a study which described a computer model for an inductively coupled plasma etching reactor to investigate asymmetries. Comparison between computed and experimentally measured ion densities and poly-silicon etch rates; Influence of the electrical transmission line properties of the coil on the uniformity of plasma generation and ion fluxes to the wafer. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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