Electrical properties of buried oxide–silicon interface.

Autor:	Dimitrakis, P., Papaioannou, G. J., Cristoloveanu, S.
Předmět:	SILICON INTERFACES (Physical sciences) DEEP level transient spectroscopy
Zdroj:	Journal of Applied Physics; 8/1/1996, Vol. 80 Issue 3, p1605, 6p, 1 Diagram, 2 Charts, 9 Graphs
Abstrakt:	Presents a study that investigated the electrical properties of buried oxide-silicon interface. Information on the separation by implanted oxygen and deep level transient spectroscopy techniques; Experimental details; Results and discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu