| Autor: |
Komuro, Shuji, Kato, Takashi, Morikawa, Takitaro, O’Keeffe, Patrick, Aoyagi, Yoshinobu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1996, Vol. 80 Issue 3, p1749, 8p |
| Abstrakt: |
Presents information on a study which conducted a systematic assessment on carrier dynamics in oxidized porous silicon using both steady-state and time-resolved photoluminescence measurements probed by turnable excitation over a given photon energy range and temperature. Background of the study; Methodology of the study; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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