Free to bound transition-related electroluminescence in 3C and 6H SiC p+–n junctions at room temperature.
| Autor: | Yoganathan, M., Choyke, W. J., Devaty, R. P., Neudeck, P. G. |
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| Zdroj: | Journal of Applied Physics; 8/1/1996, Vol. 80 Issue 3, p1763, 5p |
| Abstrakt: | Presents information on a study which examined the room temperature electroluminescence spectra of moderately nitrogen doped 3C and 6H silicon carbide p[sup +]-n junctions as a function of forward current. Background of the study; Methodology of the study; Results and discussion. |
| Databáze: | Complementary Index |
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