| Autor: |
Dubowski, J. J., Rosenquist, B. E., Lockwood, D. J., Labbé, H. J., Roth, A. P., Lacelle, C., Davies, M., Barber, R., Mason, B., Sproule, G. I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1488, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
Presents a study that carried out etching of a chemical-beam-epitaxy-grown in-phosphorus/indium-gallium arsenide multilayer structure with reactive ion etching (RIE) and laser-assisted dry etching ablation (LADEA). Evaluation of the extent of the damage induced by the two etching methods; Systematic broadening of the phonon lines as a function of depth of a RIE fabricated crater; Absence of measurable changes in the phonon line widths in LADEA. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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