Characteristics of photoacoustic displacement for silicon damaged by ion implantation.

Autor: Takamatsu, Hiroyuki, Sumie, Shingo, Morimoto, Tsutomu, Kawata, Yutaka, Muraki, Takeshi, Hara, Tohru
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1504, 6p, 2 Diagrams, 8 Graphs
Abstrakt: Presents a study that investigated the behaviors of the photoacoustic displacement (PAD) by thermoelastic analysis. Proportion of the amplitude of PAD to the square of the thickness of the damaged layer; Characterization of the amplitude of PAD by the ratio of the optical-absorption coefficient to the thermal conductivity of the damaged layer; Estimation of the thermal conductivity of the damaged layer by implantation above critical amorphization dose.
Databáze: Complementary Index