Germanium partitioning in silicon during rapid solidification.

Autor: Brunco, D. P., Thompson, Michael O., Hoglund, D. E., Aziz, M. J., Gossmann, H.-J.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1575, 8p, 1 Diagram, 2 Charts, 5 Graphs
Abstrakt: Presents information on a study that performed pulsed laser melting experiments on germanium-silicon alloys. Range of regrowth velocities of the alloys; Analysis of post-solidification germanium concentration profiles; Determination of the liquid-phase diffusivity for germanium in silicon.
Databáze: Complementary Index