| Autor: |
Wu, M. F., De Wachter, J., Van Bavel, A.-M., Moons, R., Vantomme, A., Pattyn, H., Langouche, G., Bender, H., Vanhellemont, J., Temst, K., Bruynseraede, Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1707, 6p, 9 Graphs |
| Abstrakt: |
Focuses on the formation of nickel (Ni)-silicon (Si) layers with good crystalline quality by ion-beam synthesis. Use of Rutherford backscattering spectrometry and transmission electron microscopy; Structural difference between NiSi[sub2] and cobalt-Si; Overview of the x-ray diffraction measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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