| Autor: |
Lacklison, D. E., Orton, J. W., Harrison, I., Cheng, T. S., Jenkins, L. C., Foxon, C. T., Hooper, S. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1838, 5p, 6 Graphs |
| Abstrakt: |
Examines the band gaps of both hexagonal and cubic thin films deposited by a modified molecular-beam-epitaxy process on gallium arsenide and gallium phosphide substrates. Significance of the method of supplying nitrogen to the growing film; Application of x-ray diffraction and arsenic beam; Factors that may cause errors in band-gap measurements; Structural properties of the film. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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