High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration.

Autor:	Ma, Qing, Chiras, S., Clarke, D. R., Suo, Z.
Předmět:	RESIDUAL stresses INTEGRATED circuit interconnections SILICON RAMAN spectroscopy
Zdroj:	Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p1614, 9p, 5 Diagrams, 7 Graphs
Abstrakt:	Describes the basis of the piezospectroscopic measurement technique and its application to determining the residual stress in two as-fabricated interconnects. Finite element calculations of the stress fields; Piezo-spectroscopic stress measurement in silicon; Measurement of Raman frequency shift.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu