p-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors.

Autor: Hoff, J., He, X., Erdtmann, M., Bigan, E., Razeghi, M., Brown, G. J.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1995, Vol. 78 Issue 3, p2126, 3p, 4 Graphs
Abstrakt: Discusses the fabrication of lattice-matched p-doped gallium (Ga) arsenide-gallium (Ga) indium phosphide quantum well intersub-band photodetectors. Application of low-pressure metal-organic chemical vapor deposition; Overview of the superlattice periods; Theoretical calculations of the cutoff wavelength.
Databáze: Complementary Index