| Autor: |
Lombardo, S., Larsen, K. Kyllesbech, Raineri, V., La Via, F., Campisano, S. U., Lagomarsino, S., Kazimirov, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1996, Vol. 79 Issue 7, p3456, 8p, 1 Black and White Photograph, 3 Charts, 4 Graphs |
| Abstrakt: |
Presents a study which investigated electrical and structural characteristics of carbon coimplanted Ge[subx]Si[sub1-x] layers formed by high dose germanium implantation in (100) silicon followed by rapid thermal annealing. Principle behind the procedure; Description of the experimental setup; Results. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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