Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing.
| Autor: | Luo, J. K., Thomas, H., Morgan, D. V., Westwood, D. |
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| Zdroj: | Journal of Applied Physics; 4/1/1996, Vol. 79 Issue 7, p3622, 8p, 9 Graphs |
| Abstrakt: | Presents a study which investigated the effects of growth temperature and subsequent annealing temperatures on the electrical properties of the low temperature grown gallium arsenide. Background on the sample material; Description of the experimental setup; Results. |
| Databáze: | Complementary Index |
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