| Autor: |
Morris, S. J., Zettler, J.-Th., Rose, K. C., Westwood, D. I., Woolf, D. A., Williams, R. H., Richter, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1995, Vol. 77 Issue 7, p3115, 6p, 6 Graphs |
| Abstrakt: |
Reports the results of in situ reflectance anisotropy studies of Al[subx]Ga[sub1-x]As layers grown on GaAs(001) by molecular beam epitaxy. Background to the study; Experimental details; Variation of spectra with epilayer composition; Variation of spectra with layer thickness; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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