| Autor: |
Debauche, C., Licoppe, C., Ossart, P., Devine, R. A. B., Rochet, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1993, Vol. 74 Issue 9, p5672, 7p |
| Abstrakt: |
Presents a study which examined the influence of pressure on the incorporation of nitrogen in ultraviolet chemical vapor deposited silicon dioxide films. Findings on the Auger electron spectroscopy and nuclear reaction analysis measurements; Number and nature of the paramagnetic defects measured by electron spin resonance; Details of the deposition parameters most important for the improvement of the electrical properties of the corresponding semiconductor-insulator structure. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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