| Autor: |
Huang, R. Y. S., Dutton, R. W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1993, Vol. 74 Issue 9, p5821, 7p |
| Abstrakt: |
Presents a study which used a special test structure consisting of a box-shaped boron profile capped by a lightly doped arsenic layer to determine that extended defects absorb some of the interstitials injected during a wet thermal oxidation. Details of the reduced oxidation-enhanced diffusion of the boron; Results of secondary ion mass spectrometry and transmission electron microscopy measurements; Information on the growth of the extended defects. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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