| Autor: |
Imanaga, Syunji, Hane, Kunio, Hayafuji, Yoshinori |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1993, Vol. 74 Issue 9, p5859, 8p |
| Abstrakt: |
Presents a study which compared the characteristics of a silicon-metal-oxide semiconductor device provided by Monte Carlo simulation and experimental results. Appraisal of the degree of agreement between simulated and experimental results of drain current versus drain voltage; Calculation of the impact ionization rate; Discussion of the boundary conditions in solving Poisson's equation related to the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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