| Autor: |
Horn, K. M., Tsao, J. Y., Chason, E., Brice, D. K., Picraux, S. T. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/1/1991, Vol. 69 Issue 1, p243, 7p, 9 Graphs |
| Abstrakt: |
Investigates the smoothening effects of energetic hydrogen ions on Ge(001) surfaces that have been severely roughened by oxygen etching. Reason for the need for low-temperature processing techniques in smoothening semiconductor surfaces; Chemical, physical and thermal components in surface smoothening; Discussion of enhanced hydrogen beam smoothening. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
