| Autor: |
Thakur, R. P. S., Singh, R., Nelson, A. J., Ullal, H. S., Chaudhuri, J., Gondhalekar, V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1991, Vol. 69 Issue 1, p367, 5p |
| Abstrakt: |
Presents information on annealing experiments which were carried out on phosphosilicate glass films deposited on (100) silicon substrates by using a low-pressure chemical vapor deposition technique. Details of the electrical, structural and mechanical characteristics of the films; Comparison of rapid isothermal annealing with furnace annealing; Results of spreading resistance analysis. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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