| Autor: |
Kuzuhara, M., Nozaki, T., Kohzu, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1985, Vol. 58 Issue 3, p1204, 6p |
| Abstrakt: |
Investigates the SiO[subx]N[suby] capped infrared rapid thermal annealing for activating high dose silicon (Si) implants in gallium arsenide (GaAs). Dependence of electrical activation and sheet mobility on refractive index of encapsulating film; Results of Hall measurements of Si implants in GaAs under various annealing conditions; Formation of nonalloyed ohmic contact. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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