| Autor: |
Wong, C. Y., Grovenor, C. R. M., Batson, P. E., Isaac, R. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1985, Vol. 58 Issue 3, p1259, 4p, 2 Black and White Photographs |
| Abstrakt: |
Focuses on a study that examined arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces by transmission electron microscopy and scanning transmission electron microscopy. Segregation occurring at the interfaces; Proposed model based on arsenic segregation to structural units containing dangling bonds and consequent bond saturation; Role of the dangling bonds in the electrical properties of the interfaces. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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