Numerical simulations of Czochralski silicon growth.

Autor: Chan, Y. T., Gibeling, H. J., Grubin, H. L.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1988, Vol. 64 Issue 3, p1425, 15p, 1 Diagram, 3 Charts, 14 Graphs
Abstrakt: Presents a study which developed and applied a numerical technique to the Czochralski process, a method of growing silicon crystals. Fundamentals of Czochralski growth; Numerical procedure; Conclusions.
Databáze: Complementary Index