The role of crystal-growth properties on silicon implant activation processes for GaAs.
| Autor: | Gray, M. L., Parsey, J. M., Pearton, S. J., Short, K. T., Ahrens, R. E., Sargent, L., Blakemore, J. S. |
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| Zdroj: | Journal of Applied Physics; 8/1/1988, Vol. 64 Issue 3, p1464, 4p, 3 Charts, 5 Graphs |
| Abstrakt: | Presents a study which examined donor activation efficiency and implant uniformity for wafers from gallium arsenide crystals prepared by a variety of growth methods. Experimental details; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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