Ion beam rehydrogenation and post-hydrogenation of a-Si:H.

Autor: Tsuo, Y. S., Deng, X. J., Smith, E. B., Xu, Y., Deb, S. K.
Předmět:
Zdroj: Journal of Applied Physics; 8/1/1988, Vol. 64 Issue 3, p1604, 4p, 1 Chart, 2 Graphs
Abstrakt: Presents a study which examined the rehydrogenation and post-hydrogenation of hydrogenated amorphous silicon using a Kaufman ion beam source. Experimental details; Information on the Kaufman ion beam source; Conclusion.
Databáze: Complementary Index